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Temperature and electric-field dependences of hole mobility in light-emitting diodes based on poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene]
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10.1063/1.1968445
/content/aip/journal/jap/98/2/10.1063/1.1968445
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/2/10.1063/1.1968445
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current density vs applied bias ( vs ) for a typical ITO∕MEH-PPV∕Au device at (◆), (∎), (▴), (●), and (◇).

Image of FIG. 2.
FIG. 2.

The temperature variation of low-field hole mobility, vs .

Image of FIG. 3.
FIG. 3.

The electric-field variation of hole mobility ( vs ) at room temperature.

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/content/aip/journal/jap/98/2/10.1063/1.1968445
2005-07-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature and electric-field dependences of hole mobility in light-emitting diodes based on poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene]
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/2/10.1063/1.1968445
10.1063/1.1968445
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