Electron-density profiles (dotted lines) and conduction-band edges (full lines) for undoped SiC-based and GaN-based heterostructures for a surface potential of 0.8 eV: (a) 6H/3C SiC, (b) 4H/3C SiC, and (c) /GaN. The reference energy is the Fermi level .
2DEG sheet density as a function of barrier layer thickness for undoped 4H/3C SiC and /GaN heterostructures. The surface potential is .
2DEG sheet density as a function of surface potential for the undoped 4H/3C SiC and /GaN heterostructures.
Electron-density profiles (thick lines) and conduction-band edges (thin lines) for doped SiC-based and GaN-based heterostructures with different doping levels of the supply layer: (a) 4H/3C SiC and (b) /GaN. For both structures, the surface potential is .
Dependence of the calculated sheet densities in the barrier and channel layers on the barrier layer doping for the 4H/3C SiC (full lines) and /GaN (dashed lines) structures. The surface potential is .
2DEG sheet density as a function of surface potential for the doped 4H/3C SiC and /GaN structures. The donor concentration in the supply layer is .
Material parameters used for the self-consistent solution of the Schrödinger and Poisson equations. All nitride-related parameters are taken from Refs. 4 and 19 and the SiC related data are taken from Refs. 15–18.
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