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Formation of two-dimensional electron gases in polytypic SiC heterostructures
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10.1063/1.1984070
/content/aip/journal/jap/98/2/10.1063/1.1984070
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/2/10.1063/1.1984070

Figures

Image of FIG. 1.
FIG. 1.

Electron-density profiles (dotted lines) and conduction-band edges (full lines) for undoped SiC-based and GaN-based heterostructures for a surface potential of 0.8 eV: (a) 6H/3C SiC, (b) 4H/3C SiC, and (c) /GaN. The reference energy is the Fermi level .

Image of FIG. 2.
FIG. 2.

2DEG sheet density as a function of barrier layer thickness for undoped 4H/3C SiC and /GaN heterostructures. The surface potential is .

Image of FIG. 3.
FIG. 3.

2DEG sheet density as a function of surface potential for the undoped 4H/3C SiC and /GaN heterostructures.

Image of FIG. 4.
FIG. 4.

Electron-density profiles (thick lines) and conduction-band edges (thin lines) for doped SiC-based and GaN-based heterostructures with different doping levels of the supply layer: (a) 4H/3C SiC and (b) /GaN. For both structures, the surface potential is .

Image of FIG. 5.
FIG. 5.

Dependence of the calculated sheet densities in the barrier and channel layers on the barrier layer doping for the 4H/3C SiC (full lines) and /GaN (dashed lines) structures. The surface potential is .

Image of FIG. 6.
FIG. 6.

2DEG sheet density as a function of surface potential for the doped 4H/3C SiC and /GaN structures. The donor concentration in the supply layer is .

Tables

Generic image for table
Table I.

Material parameters used for the self-consistent solution of the Schrödinger and Poisson equations. All nitride-related parameters are taken from Refs. 4 and 19 and the SiC related data are taken from Refs. 15–18.

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/content/aip/journal/jap/98/2/10.1063/1.1984070
2005-07-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of two-dimensional electron gases in polytypic SiC heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/2/10.1063/1.1984070
10.1063/1.1984070
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