PIXE spectra from the growth side of sample S2. The spectra typify that found in all the S-doped samples.
Raman spectra of undoped and sulfur-doped samples grown in 4.7% / and varying content. The inset indicates the film quality as a function of S concentration in the diamond films as measured by the FWHM of the diamond Raman line from each sample. The line is to guide the eye.
Normalized PL of undoped and sulfur-doped samples.
Arrhenuis plot of the dark conductivity of the undoped and sulfur-doped CVD diamond films. The dark current in the S-doped samples is activated above 455 K.
Variation of the measured activation energy with the applied electric field . Note that each data point is an average of the measured in all three S-doped samples.
Typical thermally stimulated conductivity measured after a UV dose of in (a) S-doped CVD diamond. The inset displays the low-temperature peak at 315 K, and (b) typical in sample A.
(a) Dose response: TSC peak maximum vs UV exposure dose. (b) Sample A (left) and the S-doped samples (right) show a linear response up to about .
Fading rate of the stored charge at room temperature.
Lattice relaxation and shifts of impurity levels in a band gap of a substitutional sulfur atom in diamond. Left, (a) the most stable atomic configuration with the lattice relaxation resulting in symmetry around the defect and (b) the impurity levels in the band gap. Right, (c) under symmetry restriction, this lattice relaxation is obtained and (d) the impurity levels in a band gap under the restriction. In the lattice configuration, pictures (a) and (c) bond lengths are indicated in percentage of the normal C–C bond length of diamond. The symbols , , and indicate the irreducible representations of the respective levels.
Lattice configuration of a sulfur-hydrogen complex with the hydrogen atom at a bond-center site (upper row) and the impurity levels in band gaps (lower row). The diagram on the left represents the impurity levels in a band gap of a substitutional sulfur atom ( symmetry) in diamond [c.f. Fig. 9(b)].
Growth conditions of the undoped and sulfur-doped sample set.
Trap parameters of 351 K and 542 K TSC peaks.
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