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Time-resolved spin filtering in semiconductor symmetric resonant barrier structures
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10.1063/1.1994945
/content/aip/journal/jap/98/2/10.1063/1.1994945
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/2/10.1063/1.1994945
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sketch of electron tunneling with the wave vector , where is the in-plane wave vector and the direction of the structure growth. The variation of the band parameters forms a symmetric double barrier tunneling heterostructure. (b) A schematic illustration of a possible spin-filter implementation.

Image of FIG. 2.
FIG. 2.

Polarization efficiency calculated for an DBT structure (see Fig. 1). The structure parameters are obtained in Ref. 20: , , , , , ( is the free-electron mass), (Ref. 13), (Ref. 21), , and .

Image of FIG. 3.
FIG. 3.

The delay time for the structure in Fig. 2. (a) Delay time for electrons with spin “up.” (b) Delay time for electrons with spin “down.”

Image of FIG. 4.
FIG. 4.

Ratio between the delay time for different polarizations of the electron spin. The structure is the same as in Fig. 2.

Image of FIG. 5.
FIG. 5.

The variation of the maximum delay time with respect to (a) the barrier thickness and (b) the well width. The constant is defined for normalization. The structure is the same as in Fig. 2.

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/content/aip/journal/jap/98/2/10.1063/1.1994945
2005-07-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-resolved spin filtering in semiconductor symmetric resonant barrier structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/2/10.1063/1.1994945
10.1063/1.1994945
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