(a) Sketch of electron tunneling with the wave vector , where is the in-plane wave vector and the direction of the structure growth. The variation of the band parameters forms a symmetric double barrier tunneling heterostructure. (b) A schematic illustration of a possible spin-filter implementation.
Polarization efficiency calculated for an DBT structure (see Fig. 1). The structure parameters are obtained in Ref. 20: , , , , , ( is the free-electron mass), (Ref. 13), (Ref. 21), , and .
The delay time for the structure in Fig. 2. (a) Delay time for electrons with spin “up.” (b) Delay time for electrons with spin “down.”
Ratio between the delay time for different polarizations of the electron spin. The structure is the same as in Fig. 2.
The variation of the maximum delay time with respect to (a) the barrier thickness and (b) the well width. The constant is defined for normalization. The structure is the same as in Fig. 2.
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