PL spectra of samples implanted at different temperatures and postannealed at for .
PL spectra of samples annealed at 1100 (asterisks), 1150 (open circles), and (full squares) after implantations at (a) RT and (b) .
Intensity of the PL peaks ( and ) as a function of the implantation temperature obtained by fitting the spectra with two Gaussian curves for the samples annealed at 1100 (squares) and (triangles). The full and open symbols indicate, respectively, the and PL peak intensities. The inset illustrates the fitting procedure used to obtain the intensities and positions of the peaks.
Wavelength of the PL peaks ( and ) as a function of the implantation temperature, obtained by fitting the spectra with two Gaussian curves for the samples annealed at 1100 (squares), 1150 (triangles), and (circles). The full and open symbols indicate, respectively, the and peak positions.
(a) PL spectra of a sample implanted at RT obtained at 15 and at . (b) PL spectra of a sample implanted at , measured at different excitation power densities. Both samples were annealed at for and the PL spectra were normalized at .
PL intensity vs excitation power density for three different wavelengths (detection energies) from PL spectra of the sample implanted at and annealed at . The region of low excitation power densities is enlarged in the figure.
(a) Diffraction pattern from Si NC embedded in an amorphous layer. (b) Dark-field TEM image of Si NC in a -thick layer.
Size histograms from TEM analyses of a sample implanted at (a) RT and (b) and thermal annealed at .
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