1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoluminescence behavior of Si nanocrystals as a function of the implantation temperature and excitation power density
Rent:
Rent this article for
USD
10.1063/1.1989437
/content/aip/journal/jap/98/3/10.1063/1.1989437
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/3/10.1063/1.1989437
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of samples implanted at different temperatures and postannealed at for .

Image of FIG. 2.
FIG. 2.

PL spectra of samples annealed at 1100 (asterisks), 1150 (open circles), and (full squares) after implantations at (a) RT and (b) .

Image of FIG. 3.
FIG. 3.

Intensity of the PL peaks ( and ) as a function of the implantation temperature obtained by fitting the spectra with two Gaussian curves for the samples annealed at 1100 (squares) and (triangles). The full and open symbols indicate, respectively, the and PL peak intensities. The inset illustrates the fitting procedure used to obtain the intensities and positions of the peaks.

Image of FIG. 4.
FIG. 4.

Wavelength of the PL peaks ( and ) as a function of the implantation temperature, obtained by fitting the spectra with two Gaussian curves for the samples annealed at 1100 (squares), 1150 (triangles), and (circles). The full and open symbols indicate, respectively, the and peak positions.

Image of FIG. 5.
FIG. 5.

(a) PL spectra of a sample implanted at RT obtained at 15 and at . (b) PL spectra of a sample implanted at , measured at different excitation power densities. Both samples were annealed at for and the PL spectra were normalized at .

Image of FIG. 6.
FIG. 6.

PL intensity vs excitation power density for three different wavelengths (detection energies) from PL spectra of the sample implanted at and annealed at . The region of low excitation power densities is enlarged in the figure.

Image of FIG. 7.
FIG. 7.

(a) Diffraction pattern from Si NC embedded in an amorphous layer. (b) Dark-field TEM image of Si NC in a -thick layer.

Image of FIG. 8.
FIG. 8.

Size histograms from TEM analyses of a sample implanted at (a) RT and (b) and thermal annealed at .

Loading

Article metrics loading...

/content/aip/journal/jap/98/3/10.1063/1.1989437
2005-08-10
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence behavior of Si nanocrystals as a function of the implantation temperature and excitation power density
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/3/10.1063/1.1989437
10.1063/1.1989437
SEARCH_EXPAND_ITEM