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Size and emission wavelength control of quantum wires
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Image of FIG. 1.
FIG. 1.

AFM images of the four uncapped InAs quantum wire (QWr) samples with different InAs deposited thicknesses: , 3.3 ML, 4.3 ML, and 5.3 ML (from upper left to bottom right). The four images have the same -scale bar.

Image of FIG. 2.
FIG. 2.

photoluminescence (PL) spectra of InAs QWrs formed after deposition of 2.5, 3.3, 4.3, and 5.3 ML of InAs.

Image of FIG. 3.
FIG. 3.

-PL spectra of InAs QWrs grown at different InAs growth rates [ and ].

Image of FIG. 4.
FIG. 4.

PL spectra of InAs QWr samples where the InP cap layer has been grown at different substrate temperatures (, 470, and ).

Image of FIG. 5.
FIG. 5.

Room-temperature PL spectra of the three series of InAs QWr samples studied in this work (see text and Table I for the description of the samples).


Generic image for table
Table I.

Growth parameters of the samples used in the photoluminescence studies: amount of InAs deposited expressed in monolayers (ML), InAs growth rate in ML/s, substrate temperature during InAs growth , and substrate temperature during InP cap layer growth . The asterisk in values indicates that, after InAs deposition at that temperature, the samples were annealed at during of quantum wire (QWr) formation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Size and emission wavelength control of InAs∕InP quantum wires