AFM images of the four uncapped InAs quantum wire (QWr) samples with different InAs deposited thicknesses: , 3.3 ML, 4.3 ML, and 5.3 ML (from upper left to bottom right). The four images have the same -scale bar.
photoluminescence (PL) spectra of InAs QWrs formed after deposition of 2.5, 3.3, 4.3, and 5.3 ML of InAs.
-PL spectra of InAs QWrs grown at different InAs growth rates [ and ].
PL spectra of InAs QWr samples where the InP cap layer has been grown at different substrate temperatures (, 470, and ).
Room-temperature PL spectra of the three series of InAs QWr samples studied in this work (see text and Table I for the description of the samples).
Growth parameters of the samples used in the photoluminescence studies: amount of InAs deposited expressed in monolayers (ML), InAs growth rate in ML/s, substrate temperature during InAs growth , and substrate temperature during InP cap layer growth . The asterisk in values indicates that, after InAs deposition at that temperature, the samples were annealed at during of quantum wire (QWr) formation.
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