1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Resistive switching mechanism of thin films grown by atomic-layer deposition
Rent:
Rent this article for
USD
10.1063/1.2001146
/content/aip/journal/jap/98/3/10.1063/1.2001146
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/3/10.1063/1.2001146
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Typical current density vs voltage curve of a 57-nm-thick film with Pt electrodes. (b) curve under positive and negative biases.

Image of FIG. 2.
FIG. 2.

curves of a 57-nm-thick film plotted in logarithmic scale.

Image of FIG. 3.
FIG. 3.

Variation of the curve of the high-resistance state with the measurement temperature in the voltage region with linear conduction.

Image of FIG. 4.
FIG. 4.

curves of samples in the low-resistance state at measurement temperatures of (a) 50, (b) 70, and (c) 110 °C.

Image of FIG. 5.
FIG. 5.

Retention behavior of samples in the low- and high-resistance states, respectively. The resistance of both states increases with time even at room temperature.

Image of FIG. 6.
FIG. 6.

Variation in the resistance of the (a) low- and (b) high-resistance states as a function of the film thickness measured at 0.5 V.

Image of FIG. 7.
FIG. 7.

Conductivity mapping results of the (a) low- and (b) high-resistance state films, using HVAFM. The bright spots represent the conducting spots.

Image of FIG. 8.
FIG. 8.

Distribution of the number of conducting spots as a function of the current at each spot for the (a) low- and (b) high-resistance states measured by HVAFM. The inset figures show the rectified distributions after subtracting the most probable current.

Image of FIG. 9.
FIG. 9.

curve in logarithmic scale of a typical nonconducting, a conducting spot of the low-resistance state, and a conducting spot of the high-resistance state.

Image of FIG. 10.
FIG. 10.

Schematic of the multiple effect for the (a) 1ow-resistive state and (b) high-resistive state. (c) shows a schematic of the convolution effect for the high-resistance state considering the larger tip-surface interaction area in the case of APAFM.

Image of FIG. 11.
FIG. 11.

Distribution of the number of conducting spots as a function of the current at each spot for the (a) low- and (b) high-resistance states measured by APAFM. The inset figures show the rectified distributions afer subtracting the most probable current.

Loading

Article metrics loading...

/content/aip/journal/jap/98/3/10.1063/1.2001146
2005-08-15
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/3/10.1063/1.2001146
10.1063/1.2001146
SEARCH_EXPAND_ITEM