The optoelectronic terahertz TDS system with SWNT film on a Si window.
(a) Measured reference terahertz pulse. (b) Measured signal terahertz pulse transmitted through the pure SWNT film. (c) Measured signal terahertz pulse transmitted through the F-doped SWNT film. (d) Amplitude of the spectra of the reference pulse (solid line) and signal pulses (dashed line: F-doped SWNT; dotted line: pure SWNT).
Comparison of measurements (dots: pure SWNT; circles: F-doped SWNT) with theoretical model (solid line: pure SWNT; dashed line: F-doped SWNT); (a) power coefficient; (b) index of refraction; (c) real part conductivity; (d) imaginary part conductivity.
Theoretical fitting parameters for the measurements presented in Figs. 3(a)–3(d).
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