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Nonlinear transport properties of doped III-N and GaAs polar semiconductors: A comparison
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10.1063/1.1999025
/content/aip/journal/jap/98/4/10.1063/1.1999025
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/4/10.1063/1.1999025

Figures

Image of FIG. 1.
FIG. 1.

Electron-drift velocity vs electric-field intensity in zinc-blende -GaN, comparing the result using the kinetic theory with Monte Carlo simulations (from Ref. 12), for and .

Image of FIG. 2.
FIG. 2.

Electron-drift velocity vs electric-field intensity in zinc-blende -Gan, comparing the result using the kinetic theory with Monte Carlo simulations (from Ref. 12), for and .

Image of FIG. 3.
FIG. 3.

Evolution of the electron-drift velocity in -GaN in terms of the traveled distance, comparing the results of the kinetic theory with a Monte Carlo simulation (from Ref. 14): (a) zinc-blende -GaN for an electric field of intensity of and (b) wurtzite GaN for an electric field of intensity of .

Image of FIG. 4.
FIG. 4.

The carriers’ mean energy vs intensity of the electric field in the steady state, comparing our results with a Monte Carlo simulation (from Ref. 15).

Image of FIG. 5.
FIG. 5.

Evolution of the electron-drift velocity in -GaAs, comparing our results with a Monte Carlo simulation (from Ref. 16).

Image of FIG. 6.
FIG. 6.

The electron quasitemperature vs the electric-field intensity in the steady state of -GaAs, comparing our results with a Monte Carlo simulation (from Ref. 17).

Image of FIG. 7.
FIG. 7.

The electron-drift velocity vs the electric-field intensity, in the steady state of -GaAs, comparing our results with experimental data (from Ref. 18). There is a good agreement at low fields, and no comparison is possible for fields over since our calculations do not include invervalley scattering.

Image of FIG. 8.
FIG. 8.

Electron mobility (and momentum relaxation time) in -GaAs for different values of the reservoir temperature, comparing our results with experimental data ( from Ref. 19, from Ref. 20, and from Ref. 21).

Image of FIG. 9.
FIG. 9.

Idem to caption of Fig. 8, but now in the case of holes in -GaAs, comparing our results with experimental data (from Ref. 22).

Image of FIG. 10.
FIG. 10.

The drift velocity of holes in -GaAs for a broad set of values of the electric-field intensity, and two values of the reservoir temperature, comparing our results with experimental data (from Ref. 23).

Image of FIG. 11.
FIG. 11.

The electron-drift velocity in the steady state of -GaAs, for the different values of the reservoir temperature, comparing our results with experimental data (from Ref. 18).

Image of FIG. 12.
FIG. 12.

Steady-state electron-drift velocity as a function of electric field in -doped zinc-blende GaN, in the conditions: , . Circles: Monte Carlo calculation reported in Ref. 24. Squares: experimental data reported in Ref. 25.

Tables

Generic image for table
Table I.

Parameters of GaAs.

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/content/aip/journal/jap/98/4/10.1063/1.1999025
2005-08-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonlinear transport properties of doped III-N and GaAs polar semiconductors: A comparison
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/4/10.1063/1.1999025
10.1063/1.1999025
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