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dc modulation in field-effect transistors operating under microwave irradiation for quantum readout
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10.1063/1.2007852
/content/aip/journal/jap/98/4/10.1063/1.2007852
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/4/10.1063/1.2007852
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the setup for the characterization of a MOSFET operating under microwave irradiation.

Image of FIG. 2.
FIG. 2.

Drain current variation in the -MOSFET M1 biased in ohmic regime as a function of the microwave power at different gate bias voltages. The continuous lines guide the eyes through the experimental points (dots).

Image of FIG. 3.
FIG. 3.

Drain current variation in the -MOSFET M1 biased in ohmic regime as a function of the gate bias voltage at different microwave powers. The continuous lines guide the eyes through the experimental points (dots).

Image of FIG. 4.
FIG. 4.

Drain current variation (logarithmic scale) as a function of the microwave power for the -MOSFET M2 operating in ohmic regime and placed in a -band cylindrical cavity tuned at . The gate bias voltage is .

Image of FIG. 5.
FIG. 5.

Electrical circuit of the loop formed by the MOSFET and the connection to the transimpedance amplifier (external to the rf cavity) coupled to the microwave field. The voltage induced by the microwave field is represented by the two voltage generators and . Linear regime of operation is ensured by the virtual ground of the transimpedance amplifier that fixes the mean value of the drain voltage to .

Image of FIG. 6.
FIG. 6.

Drain current as a function of gate voltage at different microwave-induced voltages. The results are obtained by PSPICE simulation of the schematic in Fig. 5 with the following parameters: , , , and ; the amplitude of is the 90% of the reported in the figure.

Image of FIG. 7.
FIG. 7.

Currents measured at the drain and at the substrate contacts as a function of the microwave power for the MOSFET M3 operated with and .

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/content/aip/journal/jap/98/4/10.1063/1.2007852
2005-08-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: dc modulation in field-effect transistors operating under microwave irradiation for quantum readout
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/4/10.1063/1.2007852
10.1063/1.2007852
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