Schematic of the setup for the characterization of a MOSFET operating under microwave irradiation.
Drain current variation in the -MOSFET M1 biased in ohmic regime as a function of the microwave power at different gate bias voltages. The continuous lines guide the eyes through the experimental points (dots).
Drain current variation in the -MOSFET M1 biased in ohmic regime as a function of the gate bias voltage at different microwave powers. The continuous lines guide the eyes through the experimental points (dots).
Drain current variation (logarithmic scale) as a function of the microwave power for the -MOSFET M2 operating in ohmic regime and placed in a -band cylindrical cavity tuned at . The gate bias voltage is .
Electrical circuit of the loop formed by the MOSFET and the connection to the transimpedance amplifier (external to the rf cavity) coupled to the microwave field. The voltage induced by the microwave field is represented by the two voltage generators and . Linear regime of operation is ensured by the virtual ground of the transimpedance amplifier that fixes the mean value of the drain voltage to .
Drain current as a function of gate voltage at different microwave-induced voltages. The results are obtained by PSPICE simulation of the schematic in Fig. 5 with the following parameters: , , , and ; the amplitude of is the 90% of the reported in the figure.
Currents measured at the drain and at the substrate contacts as a function of the microwave power for the MOSFET M3 operated with and .
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