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Influence of Si(001) substrate misorientation on morphological and optical properties of Ge quantum dots
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10.1063/1.2040004
/content/aip/journal/jap/98/6/10.1063/1.2040004
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/6/10.1063/1.2040004
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of Ge [7 ML (monolayer)]/ on (a) Si (001) and (b) Si (118). The scan size is . (c) and (d) are the zoom images of (a) and (b), respectively. The scan size is . The dashed lines represent the [100] direction along which islands are aligned.

Image of FIG. 2.
FIG. 2.

Cross-section TEM images of Ge (7 ML)/ on Si(001): (a) gives an overall view of some islands; (b) and (c) are higher-magnification images of “hut” and “dome” islands, respectively. The dashed lines indicate the facets orientation at 11° and 27° from the (001) surface for hut and dome islands, respectively.

Image of FIG. 3.
FIG. 3.

Cross-section TEM images of Ge (7 ML)/ on Si(118). (a) shows the elongation of a Ge hut island; (b) is a high-resolution image of (a) where (001) crystallographic planes indicated by dashed lines are clearly visible. An angle of 3° can be measured between island apex (marked by black dashed line) and (001) plane. The train of step edges at the interface can be well appreciated; (c) exhibits the facets orientations and the anisotropic shape of a Ge dome island. Angle between facets orientation (marked by black lines) and (001) plane (marked by white line) is about 27°.

Image of FIG. 4.
FIG. 4.

Comparison of Si–Ge and Ge–Ge Raman modes for Ge (7 ML)/ deposited on (a) Si (001) and (b) Si (118). A small shift of Si–Ge mode can be observed.

Image of FIG. 5.
FIG. 5.

TEM plane-view images of on (a) Si (001) and (b) Si (118). (c) and (d) are the PL spectra corresponding to the same samples on Si(001) and Si(118), respectively. The PL spectra were recorded at under excitation power. SiGe NP and TO peaks can be observed together with a large broad band at lower energy attributed to islands.

Image of FIG. 6.
FIG. 6.

Power dependence of integrated PL intensity of the band for deposited on (a) Si (001) and (b) Si(118) at .

Image of FIG. 7.
FIG. 7.

Deconvolution of the island PL broad band on Si(118) in three peaks: 1 at , 2 at , and 3 at .

Image of FIG. 8.
FIG. 8.

Intensity of the PL island peak for light polarization parallel and perpendicular to the [100] direction for deposited on (a) Si(001) and (b) Si(118). Corresponding linear polarization extracted.

Image of FIG. 9.
FIG. 9.

Temperature evolution of integrated PL intensity on (a) Si(001) and (b) Si(118).

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/content/aip/journal/jap/98/6/10.1063/1.2040004
2005-09-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Si(001) substrate misorientation on morphological and optical properties of Ge quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/6/10.1063/1.2040004
10.1063/1.2040004
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