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Photoluminescence from as-grown and annealed single quantum wells
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10.1063/1.2060940
/content/aip/journal/jap/98/6/10.1063/1.2060940
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/6/10.1063/1.2060940
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of the as-grown (a) and annealed (b) SQWs. The excitation power was .

Image of FIG. 2.
FIG. 2.

PL spectra of the as-grown (a) and annealed (b) SQWs measured at for various excitation power. The diameter of the excitation beam was .

Image of FIG. 3.
FIG. 3.

Comparison of PL and PR spectra in the vicinity of the ground-state transition for the as-grown SQW at (a) and at room temperature (b).

Image of FIG. 4.
FIG. 4.

PL spectra of the as-grown (left panel), and annealed (right panel) SQWs at selected temperatures. The solid lines represent fit by the theoretical curve related to the free-carrier recombination.

Image of FIG. 5.
FIG. 5.

Temperature dependence of the peak energy of the band-gap-related PL emission.

Image of FIG. 6.
FIG. 6.

Temperature dependence of the FWHM of the band-gap-related PL peak.

Image of FIG. 7.
FIG. 7.

Arrhenius plot of the integrated PL intensity for the annealed sample. The inset shows the Arrhenius plot in the range of together with the fitting curve.

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/content/aip/journal/jap/98/6/10.1063/1.2060940
2005-09-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/6/10.1063/1.2060940
10.1063/1.2060940
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