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A kinetic model for the oxidation of silicon germanium alloys
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10.1063/1.2060927
/content/aip/journal/jap/98/7/10.1063/1.2060927
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/7/10.1063/1.2060927

Figures

Image of FIG. 1.
FIG. 1.

A schematic diagram showing all fluxes used in the model where , , and , as described in the conventional Deal-Grove model,6 are the flux of the oxidant through the oxidizing gas towards the outer surface, the flux of the oxidant through the oxide towards the oxidizing interface, and the reaction flux of the oxidant with Si to form , respectively. represents the flux of the oxidant reacting with germanium to form . is the replacement reaction silicon flux whereby Si replaces Ge in forming .

Image of FIG. 2.
FIG. 2.

Silicon profile in the Ge-rich layer and in the SiGe substrate vs depth .

Image of FIG. 3.
FIG. 3.

Simulation results compared to the measurements of Liu et al. (Ref. 12).

Image of FIG. 4.
FIG. 4.

Simulation results compared to the measurements of LeGoues et al. (Ref. 1).

Image of FIG. 5.
FIG. 5.

Simulation results compared to the measurements of Zhang et al. (Ref. 13).

Image of FIG. 6.
FIG. 6.

Comparison of reaction rates used in our simulations to the expected dependence of the reaction rates on and . The 4 lines represent the dependence on based on Eqs. (23) and (24) for . The data points represent the reaction rates used in the simulations to fit the experiments in Ref. 1 (● ), Ref. 12 (∎ and ▴ ), and Ref. 13 (◆ ). (a) and (b) .

Image of FIG. 7.
FIG. 7.

Profile of silicon vs depth. Simulation for the experiment of LeGoues et al. (Ref. 1).

Image of FIG. 8.
FIG. 8.

Profile of silicon vs depth. Simulation for the experiment of Zhang et al. (Ref. 13).

Image of FIG. 9.
FIG. 9.

Percent of in the oxide vs the oxide thickness for the experiment of Liu et al. (Ref. 12). Ge concentration is 36% and temperature is .

Image of FIG. 10.
FIG. 10.

Percent of in the oxide vs the oxide thickness for the experiment Liu et al. (Ref. 13) Ge concentration is 36% and temperature is .

Tables

Generic image for table
Table I.

for dry and wet oxidations for both types of oxides and .

Generic image for table
Table II.

Solid solubility of and in at followed by diffusivities of and in .

Generic image for table
Table III.

The values of reaction rate constants used in the simulations.

Generic image for table
Table IV.

The values of equilibrium concentration of the oxidant in the oxide used in the simulations.

Generic image for table
Table V.

The values of the effective diffusivity used in the simulations compared to the diffusivity of Ge in pure Ge and in a SiGe layer having the same concentration of Ge as the alloy in comparison.

Generic image for table
Table VI.

Calculated consumed thickness of the SiGe alloy in all the simulated experiments

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/content/aip/journal/jap/98/7/10.1063/1.2060927
2005-10-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A kinetic model for the oxidation of silicon germanium alloys
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/7/10.1063/1.2060927
10.1063/1.2060927
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