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Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices
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10.1063/1.2073973
/content/aip/journal/jap/98/7/10.1063/1.2073973
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/7/10.1063/1.2073973
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Simulated illumination- characteristics of a silicon solar cell with a -type base doping of and carrier lifetime . The characteristics that would be obtained with three different light sources with dimming constants (, , and ) are compared to the steady-state curve. The dots superimposed on the latter are the result of correcting the curves for junction capacitance effects.

Image of FIG. 2.
FIG. 2.

Simulated illumination- characteristics of three silicon solar cells with the same -type base doping of but different carrier lifetimes of , , and 5 ms. The light source has a dimming constant of . The reconstruction of the static curves is shown in two steps: first the base charge correction and then the junction capacitance correction.

Image of FIG. 3.
FIG. 3.

Illumination intensity and open-circuit voltage for a -type silicon solar cell measured as a function of time. The first 8.5 ms corresponds to the quasi-steady-state regime (dimming characteristic constant ), followed by a rapid drop in the light intensity (quasitransient regime, with ), and finally a free decay of the open-circuit voltage in the dark (OCVD). The open-circuit voltage follows, for times greater than 9 ms, the characteristic decay of a capacitance.

Image of FIG. 4.
FIG. 4.

Illumination- curve for the silicon solar cell measured as shown in Fig. 3 (open square symbols). The method is directly accurate only at voltages higher than 0.45 V for this particular illumination. The reconstructed curve, given by the closed symbols, includes the OCVD range of the measurement, dominated by junction capacitance effects. For comparison, the experimental dark curve is shown as a continuous line.

Image of FIG. 5.
FIG. 5.

Experimental dark curve, QSS illumination- data, and reconstructed curve for a -type silicon solar cell. The QSS illumination- curve was measured using several flashes with a dimming constant of .

Image of FIG. 6.
FIG. 6.

Effective lifetime as a function of average excess carrier density in the base for the same device used in Fig. 1. Computer simulations include techniques based on voltage or luminescence measurements, which are only affected by the junction capacitance and techniques based on photoconductance measurements, where the depletion region modulation effect is dominant.

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/content/aip/journal/jap/98/7/10.1063/1.2073973
2005-10-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/7/10.1063/1.2073973
10.1063/1.2073973
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