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Strain relaxation due to V-pit formation in epilayers grown on sapphire
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10.1063/1.2108148
/content/aip/journal/jap/98/8/10.1063/1.2108148
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/8/10.1063/1.2108148
/content/aip/journal/jap/98/8/10.1063/1.2108148
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/content/aip/journal/jap/98/8/10.1063/1.2108148
2005-10-24
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/8/10.1063/1.2108148
10.1063/1.2108148
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