Room-temperature PL spectra of QDs covered by and cap layers.
Comparison of the temperature dependence of the PL efficiency of the samples with and cap layers.
Comparison of the low-temperature PLE spectra for the structures with and cap layers.
Dark-field TEM micrographs of two dot-in-a-well structures: (a) QDs grown on 2-nm and covered by 6-nm ; (b) QDs grown on 2-nm and covered by 1-nm followed by 5-nm ; and (c) magnified images of a single QD for the two structures.
(a) High magnification HAADF image for a structure with QDs grown on an -strained buffer layer and covered by a 3-nm plus 3-nm cap layer; (b) typical high-resolution TEM image of an uncapped QD grown on an strained buffer layer.
The height of QDs as a function of the thickness of the component of the composite CL. The height of uncapped dots deposited under the same conditions is also shown.
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