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Deep levels and low-frequency noise in heterostructures
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Image of FIG. 1.
FIG. 1.

A simplified diagram for the low-frequency noise measurements.

Image of FIG. 2.
FIG. 2.

Thermal noise as a function of channel length for the three samples A, B, and C. The arrows indicate thermal noise in the access resistances.

Image of FIG. 3.
FIG. 3.

The density noise spectrum for two applied voltages (50 and ). The inset contains the spectrum decomposition to deduce different contributions to the total noise.

Image of FIG. 4.
FIG. 4.

Arrhenius plot of vs . The extraction of thermal activation energies is made from Eq. (4).

Image of FIG. 5.
FIG. 5.

The vs at . The ln-ln procedure was repeated for many temperatures to deduce the slope which is given in Table III.


Generic image for table
Table I.

Resistivity, mobility, and density of the 2DEG for studied samples. Measurements were made at 300 and in the dark.

Generic image for table
Table II.

Thermal activation energies and time constants for studied samples.

Generic image for table
Table III.

Values rate deduced from of vs . The slope is close to 2 indicating that the mobility fluctuation is due to the lattice dispersion.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep levels and low-frequency noise in AlGaAs∕GaAs heterostructures