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Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based photodetector
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10.1063/1.2195022
/content/aip/journal/jap/99/10/10.1063/1.2195022
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/10/10.1063/1.2195022
/content/aip/journal/jap/99/10/10.1063/1.2195022
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/content/aip/journal/jap/99/10/10.1063/1.2195022
2006-05-23
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3μmp-i-n photodetector
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/10/10.1063/1.2195022
10.1063/1.2195022
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