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Flat panel displays for ubiquitous product applications and related impurity doping technologies
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Image of FIG. 1.
FIG. 1.

Process scheme of two shot-SLS technology (see Ref. 55).

Image of FIG. 2.
FIG. 2.

The cross section of the excimer laser annealed poly-Si film (see Ref. 25).

Image of FIG. 3.
FIG. 3.

Interface state density vs energy in the silicon band gap (see Ref. 76).

Image of FIG. 4.
FIG. 4.

Summary of (a). and (b). reported on TEOS oxide and silane based oxide. [a: S. Higashi et al., b: T. Strutz et al., c: M. C. Lee et al., d: N. Stydlo et al., e: Y. Nishi et al., f: F. Farmakis et al., g: T. Strutz et al., and h: T. Strutz et al. (see Refs. 25 and 72–78)].

Image of FIG. 5.
FIG. 5.

FE-SEM image (plane view and birds view). Plane view was observed after Secco etching. Improvement of gate leakage current (see Ref. 43).

Image of FIG. 6.
FIG. 6.

Current density vs electric field characteristics of the gate oxide for the conventional TEOS oxide and proposed stack oxide poly-Si TFTs (see Ref. 80).

Image of FIG. 7.
FIG. 7.

Typical implantation conditions for LTPS TFT.

Image of FIG. 8.
FIG. 8.

Dependence of field-effect mobility on the number of grain boundaries crossing the current direction in active channel (see Ref. 24).

Image of FIG. 9.
FIG. 9.

(a) As the grain size increases the trap density at grain boundaries in the channel decreases. (b) Number of grain boundaries in a channel deviates as the channel length approaches the grain size (see Ref. 98).

Image of FIG. 10.
FIG. 10.

Comparison of the calculated average carrier concentration vs doping concentration with the room-temperature Hall-measurement data. The solid line is the theoretical curve (see Ref. 48).

Image of FIG. 11.
FIG. 11.

Schematic diagram of an ICP ion source (see Ref. 118).

Image of FIG. 12.
FIG. 12.

Schematic diagram of a mass analyzed ion implanter (see Ref. 120).

Image of FIG. 13.
FIG. 13.

Compensation deflector array (see Ref. 121).

Image of FIG. 14.
FIG. 14.

Cross-sectional TEM image of a laser-activated TFT showing amorphous region at source/drain junction (see Ref. 134).

Image of FIG. 15.
FIG. 15.

Example of pixel circuit to compensate dispersion of TFT characteristics (Ref. 135).

Image of FIG. 16.
FIG. 16.

Field-effect mobility values observed from TFTs fabricated on imprint-grown single-grain films and SPC poly-Si films. The mobility values observed for MOSFET on (111) and (100) Si single-crystal surface are also indicated. The metal-imprint-grown single-grain films have a (111) crystal surface (see Ref. 144).

Image of FIG. 17.
FIG. 17.

(a) Schematic viewgraph of the -Czochralski (grain-filter) process. (b) Slant SEM image after irradiation of excimer laser (see Ref. 146).

Image of FIG. 18.
FIG. 18.

EBSD orientation mapping of a grid of grains by the -Czochralski process overlapping the SEM image. The curved lines indicate boundaries 3 (red), 9 (yellow) CSL boundaries, and random boundaries (white) (see Ref. 147).


Generic image for table
Table I.

System integration trend of LTPS TFT LCD (see Ref. 29).

Generic image for table
Table II.

Typical top gate LTPS-TFT process.

Generic image for table
Table III.

Improvement of gate oxide leak current by smoothing the poly-Si surface. , , (see Ref. 43).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Flat panel displays for ubiquitous product applications and related impurity doping technologies