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Arsenic uphill diffusion during shallow junction formation
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10.1063/1.2200587
/content/aip/journal/jap/99/11/10.1063/1.2200587
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/11/10.1063/1.2200587
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS (a) and ADF-STEM (b) As distribution after implantation of at and after RTP annealing at for . The linear scale evidences the As pileup toward the surface.

Image of FIG. 2.
FIG. 2.

ADF-STEM micrographs of the samples implanted at with : (a) as implanted, (b) after RTP annealing at for .

Image of FIG. 3.
FIG. 3.

Comparison between SIMS and simulated profiles of As implanted in Si with energy of (a), (b), and (c) and annealed at different conditions in the temperature range between 900 and . The dotted line represents the interface and dashed lines represent the simulations. Pileup of As toward the surface is clearly evidenced.

Image of FIG. 4.
FIG. 4.

Comparison between SIMS and simulated profiles of As implanted in Si through of oxide with energy of (a), (b), and (c) and annealed at for 5 and . Dashed lines represent the simulations. Pileup of As near the interface is evidenced.

Image of FIG. 5.
FIG. 5.

Comparison between SIMS and simulated profiles of As implanted in Si with energy of through of oxide. Before the annealing, for (a) and for (b), the oxide and of Si were chemically etched (Ref. 8). Dashed lines represent the simulations. Pileup of As near the surface is clearly evidenced.

Image of FIG. 6.
FIG. 6.

Comparison between SIMS and simulated profiles of As implanted in Si with energy of through of oxide and annealed at for different times.

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/content/aip/journal/jap/99/11/10.1063/1.2200587
2006-06-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Arsenic uphill diffusion during shallow junction formation
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/11/10.1063/1.2200587
10.1063/1.2200587
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