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Formation of a bilayer buffer on thin film solar cell absorbers by chemical bath deposition
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10.1063/1.2202694
/content/aip/journal/jap/99/12/10.1063/1.2202694
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/12/10.1063/1.2202694

Figures

Image of FIG. 1.
FIG. 1.

XPS survey spectra of the buffer/CIS sample series, where the nominal ZnS buffer layers were deposited by different deposition times: (b) 3, (c) 6, (d) 9, and (e) . In addition, the respective spectrum (a) of a corresponding, uncovered (KCN-etched) CIS substrate is also presented.

Image of FIG. 2.
FIG. 2.

Bottom: XAES detail spectra of the Auger peak as measured on the samples of the buffer/CIS series. Top: Reference spectra of some Zn compounds deposited on chalcopyrite absorbers, such as , ZnO, and ZnS, are also presented for comparison. The energetic positions of the Auger signal for different Zn compounds are additionally given as bars, representing their range of variation found in Refs. 26 and 27. (Note that in cases where only a single literature value is reported an error of , as suggested in Ref. 28, was assumed to represent its uncertainty.)

Image of FIG. 3.
FIG. 3.

Schematic illustration of the situation at the buffer/CIS interface as found after the applied alternative chemical deposition route for the preparation of a nominal ZnS layer, showing the resulting bilayer buffer on top of the CIS substrate.

Image of FIG. 4.
FIG. 4.

compositions of the deposited buffer layers as function of their deposition time, determined from the intensity change of the XPS signal (dotted line) as well as from the ratio of the different contributions [I] and [II] to the (dashed line) and the photoemission lines (solid line). The corresponding averaged composition is also shown (bullets). The given error represents the standard deviation of each independently determined value from the corresponding mean composition. On top a scale is given, which relates the deposition time to the calculated thickness of the buffer layers.

Image of FIG. 5.
FIG. 5.

Bottom: XPS detail spectra of the (a) and (b) photoemission signals of the buffer/CIS samples (bullets). The fit curves for contributions [I] and [II] to the corresponding XPS peaks are also presented (solid lines). [Note that for the presentation of the respective photoemission lines a proper fraction of a respective spectrum of an uncovered (KCN-etched) CIS sample was subtracted from the spectra of the buffer/CIS sample series in order to eliminate the influence of the background.] Top: XPS detail spectra of the (a) and (b) photoemission signals of ZnO and ZnS reference samples are shown for comparison.

Tables

Generic image for table
Table I.

Energetic positions of the Auger peak as found for the buffer/CIS sample series and some Zn-compound references as , ZnO, and ZnS compared to corresponding literature data. (Ref. 26 and 27. All experimentally determined values have an error of . In cases where only a single literature value is reported an error of as suggested in Ref. 28 was assumed to represent its uncertainty.

Generic image for table
Table II.

Energetic positions of the two contributions ( and ) to the Zn photoemission line as found for the buffer/CIS sample series. In addition, the corresponding values for the modified Auger parameter [Zn ] calculated using the values from Table I are also presented. For comparison the energetic positions of the Zn XPS signal and the respective values for of a ZnO and a ZnS reference as well as corresponding literature data (Ref. 26 and 27) are also given. All experimentally determined values have an error of .

Generic image for table
Table III.

Energetic positions of the two contributions ( and ) to the Zn photoemission line as found for the buffer/CIS sample series. In addition, the corresponding values for the modified Auger parameter [Zn ] calculated using the values from Table I are also presented. For comparison the energetic positions of the Zn XPS signal and the respective values for of a ZnO and a ZnS reference as well as corresponding literature data (Ref. 26 and 27) are also given. All experimentally determined values have an error of . Note that no reference values for were found in the literature.

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/content/aip/journal/jap/99/12/10.1063/1.2202694
2006-06-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of a ZnS∕Zn(S,O) bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/12/10.1063/1.2202694
10.1063/1.2202694
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