Rigid-ion model calculations for the phonon dispersions along high symmetry directions and one-phonon density of states obtained with the parameter values of Table I for AlAs (a), GaAs (b), and InAs (c).
Schematic representation of zinc-blende GaAs lattice with isolated and defects (a); nearest-neighbor pair (b); complex (c); and complex center (d).
Green’s function calculations of localized vibrational mode frequencies as a function of force constant change parameter for isolated defects occupying As sites in AlAs (a), GaAs (b), and InAs (c).
Trends of local mode frequencies of the (acceptors), (isoelectronic), and (acceptors) and (isoelectronic) as a function of lattice constants in Ga pnictides (a). Same key for (acceptors) and (isoelectronic) in Al and In pnictides (b).
Rigid-ion model force constants and the Szigeti effective charge used for the lattice dynamical (phonon) calculations of GaAs, AlAs, and InAs. The units (in the notations of Kunc et al. (Ref. 27) are N/m for force constants (, , , , , and ; ) and electron charge for ).
Comparison of the calculated localized vibrational modes due to closest mass N (isoelectronic) and C (acceptor) defects occupying As, P, and Sb site in various III–V compound semiconductors.
Comparison of the calculated local modes due to N defects occupying the As-site in different configurations of alloys.
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