(a) Distribution of the V and H domains on the unit cell of the model surface pattern with . (b) The simulated director field in the plane for the surface pattern shown in (a).
(Color online) (a) Optical micrographs of the PI blend films with different V-PI wt % as indicated on the upper right. The scale bar shown on the first picture applies to all other pictures. The arrows at the bottom illustrate the optical setup used to take the pictures. (b) Topographic AFM images of the 1.4 and 2.7 V-PI wt % films showing the nanodomains on the film surface. The lighter areas are elevations. The same scale bar applies to both images. The lower panels are cross-sectional profiles drawn along the blue lines shown in the upper main panels. (c) Measured LC pretilt (left axis) as a function of wt % of the V-type PI (squares). Also plotted is the area fraction (right axis) vs wt % of the V PI according to the optical (solid circles) and AFM (open circles) images.
Three pi-cell configurations: (a) Splay, (b) bend upon external bias, and (c) no-bias bend.
(Color online) (a) The transmission-voltage characteristic of our pi cell where the cell gap is . The transmission data were normalized by that at zero volt . The data were taken in steps for and steps for . (b) The oscilloscope traces of normalized transmission obtained when voltage pulse trains with pulse heights of (upper) and (lower) were applied across the cell triggering. In here, zero time is synchronized with the rising edge of the pulses. (c) Measured response times of a NBB cell made by our alignment surfaces between various initial and final transmission states shown in (a).
Article metrics loading...
Full text loading...