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Phenomenological modeling of diffusion profiles: Sn in GaAs
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10.1063/1.2206119
/content/aip/journal/jap/99/12/10.1063/1.2206119
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/12/10.1063/1.2206119

Figures

Image of FIG. 1.
FIG. 1.

A modeled error function and “double-profile” curves. Key features used during the fitting process of the double profile have been marked and labeled.

Image of FIG. 2.
FIG. 2.

Experimental Sn concentration profile in GaAs obtained by SIMS before annealing (dashed lines) and after a anneal at (squares) from samples having three different initial concentrations: (a) , (b) , and (c) . Shown as black lines are the modeled Sn concentration profiles using a five-parameter fit, starting from the experimental initial profile.

Image of FIG. 3.
FIG. 3.

Experimental Sn concentration profile in GaAs before annealing (dashed line) and after a anneal at (squares). The error function solution (thin line) was used to determine the parameter, which was then used to complete the five-parameter fit (thick line).

Image of FIG. 4.
FIG. 4.

Modeled concentration profiles for (a) substitutional and (b) interstitial Sn atoms from the profile shown in Fig. 2(a).

Tables

Generic image for table
Table I.

Values of , , , and fitted to three different temperature profiles. Arrhenius parameters determined are also shown.

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/content/aip/journal/jap/99/12/10.1063/1.2206119
2006-06-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phenomenological modeling of diffusion profiles: Sn in GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/12/10.1063/1.2206119
10.1063/1.2206119
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