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Separate-confinement-oxidation vertical-cavity surface-emitting laser structure
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10.1063/1.2206129
/content/aip/journal/jap/99/12/10.1063/1.2206129
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/12/10.1063/1.2206129

Figures

Image of FIG. 1.
FIG. 1.

Flow chart of the self-consistent calculation algorithm.

Image of FIG. 2.
FIG. 2.

The typical structure of the standard GaAs-based oxide-confined (OC) VCSEL with a single oxide aperture located at the antinode position of the optical standing wave within the VCSEL -cavity. DBR—distributed-Bragg-reflector resonator mirrors.

Image of FIG. 3.
FIG. 3.

The standing optical wave of the mode in the index-guided VCSEL cavity with a single oxide aperture. The profile of an index of refraction is also shown.

Image of FIG. 4.
FIG. 4.

Radial profiles of the threshold current densities of the indicated lowest-threshold LP modes determined for different radii of the active region of the index-guided -cavity DQW VCSEL.

Image of FIG. 5.
FIG. 5.

The wavelengths of the indicated lowest-threshold cavity modes (dashed curve) and their maximal threshold optical gain (solid curve) in the index-guided -cavity DQW VCSEL.

Image of FIG. 6.
FIG. 6.

Radial profiles of intensities of the lowest-threshold LP modes plotted for various radii of the active region of the index-guided -cavity DQW VCSEL. Arrows indicate profile changes following an increase in the active-region radius.

Image of FIG. 7.
FIG. 7.

Maximal RT cw threshold optical gain (solid line) and the wavelength of the emitted radiation (dashed line) of the indicated lowest-threshold LP modes determined for the diameter -cavity DQW VCSEL as a function of the distance of the oxide aperture from its antinode position within a laser cavity.

Image of FIG. 8.
FIG. 8.

Maximal RT cw threshold optical gain (solid line) and the wavelength of the emitted radiation (dashed line) of the indicated lowest-threshold LP modes determined for the diameter -cavity DQW VCSEL as a function of the distance of the oxide aperture from its antinode position within a laser cavity.

Image of FIG. 9.
FIG. 9.

Maximal RT cw threshold values of the optical gain (solid line) and the wavelength of emitted radiation (dashed line) of the indicated lowest-threshold LP transverse modes vs the radius of the active region of the -cavity DQW VCSEL with two oxide apertures localized at the antinode positions on both sides of the active region. Dotted lines correspond to the fundamental transverse mode when it is not the lowest-threshold mode.

Image of FIG. 10.
FIG. 10.

A comparison of the separate-confinement-heterostructure (SCH) and the separate-confinement-oxidation (SCO) structure.

Image of FIG. 11.
FIG. 11.

(Color online) The considered structure of the -cavity SCO DQW VCSEL.

Image of FIG. 12.
FIG. 12.

The optical standing wave of the fundamental mode within the cavity of the considered SCO VCSEL structure.

Image of FIG. 13.
FIG. 13.

An impact of the radius of the electrical aperture on the RT cw maximal threshold gain and threshold current of the indicated lowest-threshold transverse LP modes determined for the large-size diameter SCO VCSEL.

Image of FIG. 14.
FIG. 14.

An impact of the radius of the electrical aperture on the RT cw maximal active-region temperature increase and wavelength of the indicated lowest-threshold transverse modes of the large-size diameter SCO VCSEL.

Tables

Generic image for table
Table I.

Compositions and thicknesses of the structure layers of the standard index-guided -cavity VCSEL with a single oxide aperture. Some values of the model parameters are also given.

Generic image for table
Table II.

Simulation results of the RT cw threshold operation of the -cavity OC DQW VCSELs. Notation: —radius of the oxide aperture working simultaneously as both the electrical and the optical aperture, —radius of the electrical aperture, —threshold voltage, —threshold current, —maximal temperature within the active region, —maximal active-region threshold optical gain, mode—the lowest-threshold transverse mode and, —its wavelength. Structure notation: GG—the gain-guided VCSEL with a single oxide electrical aperture of a diameter localized at the node position of the optical standing wave within the cavity, IG—the index-guided VCSEL with a single oxide aperture of a diameter , working simultaneously as both the electrical and the optical aperture, localized at the antinode position, D—the VCSEL with two oxide apertures localized at the antinode positions on both sides of the active region and working as the electrical and the optical apertures, and SCO—the VCSEL with two oxide apertures localized at the antinode (working as both the electrical and optical aperture) and node positions (electrical aperture) on both sides of the active region.

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/content/aip/journal/jap/99/12/10.1063/1.2206129
2006-06-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Separate-confinement-oxidation vertical-cavity surface-emitting laser structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/12/10.1063/1.2206129
10.1063/1.2206129
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