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Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism
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10.1063/1.2158138
/content/aip/journal/jap/99/2/10.1063/1.2158138
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/2/10.1063/1.2158138
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron microscopy (SEM) images of directionally solidified polysilicon films, as a function of the film thickness. (a) 30-nm-thick Si film, (b) 50-nm-thick Si film, and (c) 100-nm-thick Si film. Note the improvement in the microstructural quality of increasingly thicker films, manifested by the widening of the crystal domains. The fabricated TFT devices had the channel region oriented parallel to the principal direction of the crystal domain boundaries.

Image of FIG. 2.
FIG. 2.

(a) Effect of gate bias on the transient amplitude, under dark state and illumination, in TFTs fabricated on 100-nm-thick poly-Si films. The gate bias conditions are and (under dark state) and (엯) , (▵) 0 V, (▿) , and (under illumination) (×) . The solid line indicates the fit of Eq. (10) to the experimental data with fitting parameters [from Eq. (8)], and . (b) Temperature dependence of the quiescent current. The symbols used correspond to of (a).

Image of FIG. 3.
FIG. 3.

(a) Effect of duration on the temperature dependence of transient amplitude in TFTs fabricated on 100-nm-thick poly-Si films. The gate bias conditions are and . The solid lines indicate the fit of Eq. (10) to the experimental data with fitting parameters [from Eq. (8)], and [from Eq. (8)], and ; and [from Eq. (8)], and . (b) Temperature dependence of the quiescent current at .

Image of FIG. 4.
FIG. 4.

(a) Effect of duration on the temperature dependence of transient amplitude in TFTs fabricated on 50-nm-thick poly-Si films. The gate bias conditions are and . The solid lines indicate the fit of Eq. (10) to the experimental data with fitting parameters [from Eq. (8)], and [from Eq. (8)], and ; and [from Eq. (8)], and . (b) Temperature dependence of the quiescent current at .

Image of FIG. 5.
FIG. 5.

(a) Effect of duration on the temperature dependence of transient amplitude in TFTs fabricated on 30-nm-thick poly-Si films. The gate bias conditions are and . The solid lines indicate the fit of Eq. (10) to the experimental data with fitting parameters [from Eq. (8)], and [from Eq. (8)], and ; and [from Eq. (8)], and . (b) Temperature dependence of the quiescent current at .

Image of FIG. 6.
FIG. 6.

Trend in generation lifetime, as a function of the extracted activation energy, for TFTs having polysilicon active layer with thickness in the range of 30–100 nm.

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/content/aip/journal/jap/99/2/10.1063/1.2158138
2006-01-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/2/10.1063/1.2158138
10.1063/1.2158138
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