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Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in
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10.1063/1.2160708
/content/aip/journal/jap/99/3/10.1063/1.2160708
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/3/10.1063/1.2160708
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/content/aip/journal/jap/99/3/10.1063/1.2160708
2006-02-01
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/3/10.1063/1.2160708
10.1063/1.2160708
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