The energy-level diagram of two electron trapping states and two kinds of hole recombination centers. Transitions occurring during excitation are given by the solid lines, and transitions taking place during the optical readout stage are shown by the thick lines.
Simulated dose dependence of the concentration of the occupancy of the radiative center at the end of irradiation plus relaxation (a) and the end of light stimulation (b). Curve (c) shows, under the same circumstances, the integral OSL as a function of the dose. The relevant set of parameters is given in the text and includes an initial concentration of radiative center, .
With the same parameters as in Fig. 2, the occupancy of the radiative center following excitation and relaxation is shown in (a), and that of active trap in (b). Curve (c) shows the simulated integral OSL in the same range of doses.
Same as Fig. 3, but with . Curves (a) and (b) show, respectively, the occupancies of and at the end of relaxation, and (c) depicts the simulated integral OSL.
Similar to Fig. 3, but the total concentration of competing centers is set to be .
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