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Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in structures
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10.1063/1.2161823
/content/aip/journal/jap/99/4/10.1063/1.2161823
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/4/10.1063/1.2161823
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Figures

Image of FIG. 1.
FIG. 1.

Sketch of the electric field (upper panel) and free carriers concentrations , (lower panel) in the structure during the passage of the ionization front. Note that . The space charge that screens the electric field is located within the charged layer of the width at edge of the plasma region. In the low-field region , whereas in the space charged layer . We refer to Refs. 13 and 17 for more detailed explanation of the front inner structure.

Image of FIG. 2.
FIG. 2.

Impact ionization coefficients for (according to Ref. 32) and Si.

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/content/aip/journal/jap/99/4/10.1063/1.2161823
2006-02-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/4/10.1063/1.2161823
10.1063/1.2161823
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