(Color online) Spectral response of the electroluminescence and the negative luminescence at .
(Color online) External quantum efficiency of the negative luminescence for the temperature range of .
(Color online) Internal quantum efficiency of the negative luminescence observed upon reverse-bias conditions (negative current density) and of the electroluminescence, applying forward bias (positive current density) of two NL samples having band gaps of (a) and (b) . In (a) an additional surface leakage above is apparent, while (b) does not exhibit such a surface leakage (see text).
(Color online) Temperature dependence of the internal quantum efficiency of both the 121 and the diodes measured close to equilibrium; data are collected by applying low injection currents of approximately forward bias (full symbols). The ratio of radiative and Auger recombination rates are plotted for several background doping levels. -type backgrounds ranging from up to are chosen for the calculations (lines). Dominant CHCC Auger recombination with is assumed.
(Color online) Minority-carrier lifetime for CHCC Auger-dominated recombination. The dependence on -type carrier background and temperature is shown.
(Color online) Dependence of the Auger-limited lifetime on band-gap energy for -type background. A constant Auger coefficient is assumed. The background donor concentration is indicated.
(Color online) Dependence of the diode’s internal quantum efficiency on injection current applying forward-bias voltage at temperatures between 80 and (symbols). At NL data for small reverse-bias currents are included. Solid lines are obtained by using Eq. (17).
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