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Nonequilibrium radiation of long-wavelength superlattice photodiodes
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10.1063/1.2170947
/content/aip/journal/jap/99/4/10.1063/1.2170947
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/4/10.1063/1.2170947
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Spectral response of the electroluminescence and the negative luminescence at .

Image of FIG. 2.
FIG. 2.

(Color online) External quantum efficiency of the negative luminescence for the temperature range of .

Image of FIG. 3.
FIG. 3.

(Color online) Internal quantum efficiency of the negative luminescence observed upon reverse-bias conditions (negative current density) and of the electroluminescence, applying forward bias (positive current density) of two NL samples having band gaps of (a) and (b) . In (a) an additional surface leakage above is apparent, while (b) does not exhibit such a surface leakage (see text).

Image of FIG. 4.
FIG. 4.

(Color online) Temperature dependence of the internal quantum efficiency of both the 121 and the diodes measured close to equilibrium; data are collected by applying low injection currents of approximately forward bias (full symbols). The ratio of radiative and Auger recombination rates are plotted for several background doping levels. -type backgrounds ranging from up to are chosen for the calculations (lines). Dominant CHCC Auger recombination with is assumed.

Image of FIG. 5.
FIG. 5.

(Color online) Minority-carrier lifetime for CHCC Auger-dominated recombination. The dependence on -type carrier background and temperature is shown.

Image of FIG. 6.
FIG. 6.

(Color online) Dependence of the Auger-limited lifetime on band-gap energy for -type background. A constant Auger coefficient is assumed. The background donor concentration is indicated.

Image of FIG. 7.
FIG. 7.

(Color online) Dependence of the diode’s internal quantum efficiency on injection current applying forward-bias voltage at temperatures between 80 and (symbols). At NL data for small reverse-bias currents are included. Solid lines are obtained by using Eq. (17).

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/content/aip/journal/jap/99/4/10.1063/1.2170947
2006-02-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonequilibrium radiation of long-wavelength InAs∕GaSb superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/4/10.1063/1.2170947
10.1063/1.2170947
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