Index of content:
Volume 99, Issue 4, 15 February 2006
- LASERS, OPTICS, AND OPTOELECTRONICS
Impact of band gap shrinkage on simulated bifurcation routes in directly modulated semiconductor lasers99(2006); http://dx.doi.org/10.1063/1.2173308View Description Hide Description
A carrier heating model is derived by taking into account the various temperature processes in the active layer of laser diodes. This model is then used to simulate the static and dynamic characteristics of a directly modulated distributed-feedback laser diode. The calculated results are compared with the measured results of this device as obtained in an earlier work [H. F. Liu and W. F. Ngal, IEEE J. Quantum Electron.29, 1668 (1993)], and this reveals the significant impact of band gap shrinkage on simulated results. This study also shows that the carrier heating model is a self-consistent model that naturally describes the gain suppression phenomena in directly modulated laser diodes.
99(2006); http://dx.doi.org/10.1063/1.2173309View Description Hide Description
A possible realization of isotropic artificial backward-wave materials is theoreticallyanalyzed. An improved mixing rule for the effective permittivity of a composite material consisting of two sets of resonant dielectric spheres in a homogeneous background is presented. The equations are validated using the Mie theory and numerical simulations. The effect of a statistical distribution of sphere sizes on the increase of losses in the operating frequency band is discussed and some examples are shown.