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Nonlinear charge transport in III-N semiconductors: Mobility, diffusion, and a generalized Einstein relation
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10.1063/1.2186377
/content/aip/journal/jap/99/7/10.1063/1.2186377
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/7/10.1063/1.2186377

Figures

Image of FIG. 1.
FIG. 1.

For the three -doped III nitrides, with and , in the steady state as a function of the electric field intensity: (a) the quasitemperature, (b) the drift velocity of electrons, (c) the quantity of Eq. (8).

Image of FIG. 2.
FIG. 2.

The mobility and the differential mobility as a function of the electric field intensity (with a change from a logarithmic to a linear scale at ).

Image of FIG. 3.
FIG. 3.

Dependence on the electric field strength of the squared characteristic velocity of Eq. (26).

Image of FIG. 4.
FIG. 4.

Dependence on the electric field strength of the (a) , (b) , and (c) ratio .

Image of FIG. 5.
FIG. 5.

Dependence of the diffusion coefficient of Eq. (28) on the electric field strength in the steady state of the three -doped III nitrides in the conditions shown in Figs. 1 and 2.

Image of FIG. 6.
FIG. 6.

Dependence on the electric field strength of the generalized Einstein relation in the steady state of the three -doped III nitrides in the conditions shown in Fig. 1.

Tables

Generic image for table
Table I.

Parameters.

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/content/aip/journal/jap/99/7/10.1063/1.2186377
2006-04-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonlinear charge transport in III-N semiconductors: Mobility, diffusion, and a generalized Einstein relation
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/7/10.1063/1.2186377
10.1063/1.2186377
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