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Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy
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10.1063/1.2190720
/content/aip/journal/jap/99/7/10.1063/1.2190720
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/7/10.1063/1.2190720
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Surface morphologies of InN films grown at different temperatures investigated by AFM. The scanned areas are and (shown in the inset), respectively. (b) Surface morphologies of InN films grown at different temperatures investigated by SEM.

Image of FIG. 2.
FIG. 2.

rms roughness and grain size of InN films as functions of growth temperature.

Image of FIG. 3.
FIG. 3.

HR-XRD FWHM values of (002) scans (solid circle) and (102) scans (solid rectangular) as a function of InN growth temperature. The mathematically polynomial fitting lines are also shown.

Image of FIG. 4.
FIG. 4.

Room temperature residual electron concentration (solid rectangular) and Hall mobility (solid circle) of InN film as functions of InN growth temperature.

Image of FIG. 5.
FIG. 5.

Normalized PL spectra of InN films as a function of InN growth temperature, measured at .

Image of FIG. 6.
FIG. 6.

(a) PL peak energy and lattice constant as functions of InN growth temperature. The polynomial fitting lines are also shown. (b) Intensity and FWHM of PL as functions of InN growth temperature.

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/content/aip/journal/jap/99/7/10.1063/1.2190720
2006-04-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/7/10.1063/1.2190720
10.1063/1.2190720
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