1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Width dependence of annealing effects in nanowires
Rent:
Rent this article for
USD
10.1063/1.2150809
/content/aip/journal/jap/99/8/10.1063/1.2150809
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2150809
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

FESEM images of the nanowires. (a) The layout of a four probe resistance measurement for a wide single wire patterned on . (b) A wide single wire under higher magnification. All the wires in the series of study are patterned along [110] direction of the same wafer.

Image of FIG. 2.
FIG. 2.

(a) Resistivity vs temperature (measured in van der Pauw geometry) of as-grown and annealed mesa patterned on heterostructures. The inset shows magnetization vs temperature for the same sample measured in a magnetic field of in-plane while warming after field cooling in a field. The values of obtained from both measurements are consistent. (b) Temperature dependence of (four-probe) resistivity for unannealed wires, patterned from the same sample. (c) The temperature dependence of the resistivity of the same wires after six anneals.

Image of FIG. 3.
FIG. 3.

(a) Curie temperature, (b) conductivity at , and (c) rate of change of conductivity (measured at ) for the different wires as a function of total anneal time. Each of these wires is measured as-grown and after every additional hour of annealing at up to . The rate change of conductivity was calculated based on the neighboring conductivity values of the corresponding annealing time.

Loading

Article metrics loading...

/content/aip/journal/jap/99/8/10.1063/1.2150809
2006-04-17
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Width dependence of annealing effects in (Ga,Mn)As nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2150809
10.1063/1.2150809
SEARCH_EXPAND_ITEM