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Width dependence of annealing effects in nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

FESEM images of the nanowires. (a) The layout of a four probe resistance measurement for a wide single wire patterned on . (b) A wide single wire under higher magnification. All the wires in the series of study are patterned along [110] direction of the same wafer.

Image of FIG. 2.
FIG. 2.

(a) Resistivity vs temperature (measured in van der Pauw geometry) of as-grown and annealed mesa patterned on heterostructures. The inset shows magnetization vs temperature for the same sample measured in a magnetic field of in-plane while warming after field cooling in a field. The values of obtained from both measurements are consistent. (b) Temperature dependence of (four-probe) resistivity for unannealed wires, patterned from the same sample. (c) The temperature dependence of the resistivity of the same wires after six anneals.

Image of FIG. 3.
FIG. 3.

(a) Curie temperature, (b) conductivity at , and (c) rate of change of conductivity (measured at ) for the different wires as a function of total anneal time. Each of these wires is measured as-grown and after every additional hour of annealing at up to . The rate change of conductivity was calculated based on the neighboring conductivity values of the corresponding annealing time.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Width dependence of annealing effects in (Ga,Mn)As nanowires