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Spin-dependent tunneling in FM∣semiconductor∣FM structures
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10.1063/1.2151805
/content/aip/journal/jap/99/8/10.1063/1.2151805
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2151805
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Three interface structures of and . Models A, B, and C (from the left).

Image of FIG. 2.
FIG. 2.

(Color online) Absolute square of (squares), (circles), and (triangles) wave functions in a supercell. The dashed lines without data points indicate the expected decay rate based on Eq. (1).

Image of FIG. 3.
FIG. 3.

(Color online) The same quantities as in Fig. 2 for .

Image of FIG. 4.
FIG. 4.

(Color online) Dispersion for GaAs in the vicinity of the gap along (100). labels the top of the valence band and is the bottom of the conduction band.

Image of FIG. 5.
FIG. 5.

(Color online) The same as Fig. 4 for ZnSe.

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/content/aip/journal/jap/99/8/10.1063/1.2151805
2006-04-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-dependent tunneling in FM∣semiconductor∣FM structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2151805
10.1063/1.2151805
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