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Large magnetoresistance of a GaAs:MnAs granular thin film at room temperature
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10.1063/1.2151817
/content/aip/journal/jap/99/8/10.1063/1.2151817
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2151817
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Atomic force microscopy image of the GaAs:MnAs granular thin film surface. The scan size was . The vertical-axis scale was . A root mean square of the surface roughness in the vertical axis was estimated to be 0.097 nm.

Image of FIG. 2.
FIG. 2.

(a) Magnetic circular dichroism (MCD) spectra of the GaAs:MnAs granular thin film at 50 K (a dotted curve) and 300 K (a solid curve) measured with a magnetic field of 1 T applied perpendicularly to the film surface. (b) The magnetic field dependence of MCD intensity at 50 K (a dotted curve) and 300 K (a solid curve) measured with a magnetic field of 1 T applied perpendicularly to the film surface.

Image of FIG. 3.
FIG. 3.

Current–voltage characteristics of the GaAs:MnAs granular thin film measured by two-point-probe method at room temperature in a dc bias voltage range between 0 and 110 V. When a magnetic field is 0 T (solid curves), the characteristics showed a current jump at 96 V and hysteretic behavior. When a magnetic field of 1 T was applied in plane perpendicular to the current direction (dotted curves), no current jump was observed in this voltage range.

Image of FIG. 4.
FIG. 4.

Magnetotransport characteristics of the GaAs:MnAs thin film at room temperature. Magnetic field dependence of the current at a constant bias voltage of (a) 110 V and (b) 90 V. Magnetic field dependence of the resistance at a constant bias voltage of (c) 110 V and (d) 90 V.

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/content/aip/journal/jap/99/8/10.1063/1.2151817
2006-04-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large magnetoresistance (>600%) of a GaAs:MnAs granular thin film at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2151817
10.1063/1.2151817
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