(a) Symmetric scan of a structure grown on STO(001) and (b) atomic force microscope image of a trilayer.
Field dependence of the resistance of a LSMO/STO/NFO nanojunction measured at 4 K with bias voltages of 5 (a), 10 (b), and 50 mV (c).
Bias voltage dependence of the TMR of a LSMO/STO/NFO nanojunction at 4 K.
Temperature dependence of the TMR of a LSMO/STO/NFO nanojunction normalized by the TMR at 4 K (a), of the spin polarization of a LSMO/STO interface [measured in a LSMO/STO/LSMO junction (Ref. 14)] (b), and of the spin polarization found for the NFO layer normalized at 4 K (c).
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