Temperature and bias dependences of the TMR and junction resistance in the spin parallel and spin antiparallel configurations.
Band structure of bcc along the (001) direction. Fermi level is marked with dashed lines.
Inelastic eletrcon tunneling spectrum of a junction with a 25 Å MgO barrier (no Mg insertion layer). The arrows indicate the resonant peak positions and dashed lines indicate the position of .
TMR dependence on the Mg insertion layer thickness at room temperature.
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