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Inelastic tunneling spectroscopy of magnetic tunnel junctions based on with Mg insertion layer
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10.1063/1.2162047
/content/aip/journal/jap/99/8/10.1063/1.2162047
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2162047
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature and bias dependences of the TMR and junction resistance in the spin parallel and spin antiparallel configurations.

Image of FIG. 2.
FIG. 2.

Band structure of bcc along the (001) direction. Fermi level is marked with dashed lines.

Image of FIG. 3.
FIG. 3.

Inelastic eletrcon tunneling spectrum of a junction with a 25 Å MgO barrier (no Mg insertion layer). The arrows indicate the resonant peak positions and dashed lines indicate the position of .

Image of FIG. 4.
FIG. 4.

TMR dependence on the Mg insertion layer thickness at room temperature.

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/content/aip/journal/jap/99/8/10.1063/1.2162047
2006-04-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB∕MgO∕CoFeB with Mg insertion layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2162047
10.1063/1.2162047
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