scans for a 30 nm LBMO film grown on STO. S and B are for STO and LBMO, respectively. The right inset shows a scan close to the (004) reflection of STO for a trilayer. S, B, and L labels indicate the positions of the STO(004), LBMO(040), and LSMO(004) reflections, respectively. The asterisk signals a reflection of the STO(004) planes with residual radiation. Left inset: AFM image of the trilayer. The vertical scale is 1.6 nm.
Temperature dependence of the resistivity. Left inset: logarithm of the resistance plotted against the reciprocal temperature. The line is a fit to the data. Right inset: CTAFM resistance mapping of the trilayer.
Magnetization hysteresis cycle measured at 10 K for a 6 nm LBMO film grown on STO, with the field applied in plane. Inset: zoom of the low-field region.
Tunnel magnetoresistance curve of a spin-filter junctions, at 4 K and a bias voltage of 10, 20, and 50 mV. Open symbols correspond to the to sweep and filled symbols to the to sweep. Inset: curve at 4 K and 6 kOe.
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