1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells
Rent:
Rent this article for
USD
10.1063/1.2162813
/content/aip/journal/jap/99/8/10.1063/1.2162813
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2162813
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure of the double-barrier MTJs with a thermal barrier in the bottom electrode (left), and TEM picture of the fabricated junctions, from where the quality of both oxide barriers and both Ru spacers of the top and bottom SAF layers could be investigated. Vacuum breaks that occurred during stack fabrication are indicated by .

Image of FIG. 2.
FIG. 2.

Dependence of the film resistivity on the annealing temperature indicating the transition from amorphous to crystalline above 270 °C. The resistivity of and 1000-Å-thick Al films is also shown. The inset shows the AFM scan of an Al 150 Å stack, with a rms roughness of 0.28 nm.

Image of FIG. 3.
FIG. 3.

VSM curve of the complete double-barrier junction stack annealed at 280 °C (structure as in Fig. 1, grown above the GeSbTe film). One of the insets shows the temperature dependence of the storage layer exchange coupling, from which a blocking temperature of is obtained.

Image of FIG. 4.
FIG. 4.

(a) Transfer curves for the two writing states, measured before and after thermally assisted switching. The current pulse was applied under an external field of . The switching mechanism (from the transfer curve at positive shift into negative shift) is illustrated in (b), where the junction resistance is monitored for several points of the transfer curve, after the application of a current pulse.

Image of FIG. 5.
FIG. 5.

(a) Write current density and (b) write power density (, with measured at ) dependence on the junction area, obtained for double junctions with or without GeSbTe thermal barriers.

Loading

Article metrics loading...

/content/aip/journal/jap/99/8/10.1063/1.2162813
2006-04-19
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2162813
10.1063/1.2162813
SEARCH_EXPAND_ITEM