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Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells
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10.1063/1.2162813
/content/aip/journal/jap/99/8/10.1063/1.2162813
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2162813
/content/aip/journal/jap/99/8/10.1063/1.2162813
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/content/aip/journal/jap/99/8/10.1063/1.2162813
2006-04-19
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2162813
10.1063/1.2162813
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