banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Planar Hall-effect magnetic random access memory
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Resistivity vs temperature of an epitaxial LSMO sample. The peak temperature is at . Inset: The pattern used for the experiments. The two easy axes are EA1 and EA2. The angle between the applied magnetic field and the current path is denoted , and the angle between the magnetization and the current path is denoted .

Image of FIG. 2.
FIG. 2.

Planar Hall signal in a LSMO film vs time at different temperatures. A 50 Oe magnetic field is applied parallel to one of the easy axes (EA2). The field aligns the magnetization along this axis, and a negative signal is observed. The magnetic field is then turned off, leaving the magnetization in its remanent state along this axis. After 10 min, the magnetic field is pulsed on and then off, this time parallel to the other easy axis, which leaves the magnetization in remanent state along EA1. This leads to a positive signal reading. This procedure is repeated several times. The bottom graph shows the magnitudes of the magnetic field directed along EA1 (dashed line) and the magnitudes of the magnetic field directed along EA2 (solid line).

Image of FIG. 3.
FIG. 3.

Planar Hall signal as a function of with (squares) and without (circles) an applied 50 Oe magnetic field directed at with respect to the current path. The line connecting the squares is a fit to Eq. (2).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Planar Hall-effect magnetic random access memory