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In situ transport in alumina-based magnetic tunnel junctions during high-vacuum annealing
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10.1063/1.2165110
/content/aip/journal/jap/99/8/10.1063/1.2165110
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2165110
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Temperature dependence of parallel-state junction resistance for under-oxidized (upper) and optimally oxidized (lower) MTJs measured in situ during annealing. Filled red markers represent the heating phase, while open markers represent cooling.

Image of FIG. 2.
FIG. 2.

(Color online) Bias dependence of TMR (upper) for an optimally oxidized junction measured at 77 K, and spectroscopic TMR asymmetry (lower) also at 77 K. Note the increase in TMR after annealing and the reduction in the electronic structure related features in the odd TMR.

Image of FIG. 3.
FIG. 3.

(Color online) Bias dependence of TMR (upper) for an intentionally under-oxidized junction measured at 77 K, and spectroscopic TMR asymmetry (lower) also at 77 K. Note here the decrease in TMR after annealing and again the reduction in the electronic structure related features in the odd TMR.

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/content/aip/journal/jap/99/8/10.1063/1.2165110
2006-04-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ transport in alumina-based magnetic tunnel junctions during high-vacuum annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2165110
10.1063/1.2165110
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