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Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
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10.1063/1.2165138
/content/aip/journal/jap/99/8/10.1063/1.2165138
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2165138
/content/aip/journal/jap/99/8/10.1063/1.2165138
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/content/aip/journal/jap/99/8/10.1063/1.2165138
2006-04-19
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2165138
10.1063/1.2165138
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