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Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
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10.1063/1.2165138
/content/aip/journal/jap/99/8/10.1063/1.2165138
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2165138
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical resistance-magnetic-field curves (a) without and (b) with the edge oxidization. Switching fields , , and are defined by the switching fields at the point of the resistance changes of 50%, 10%, and 90%, respectively.

Image of FIG. 2.
FIG. 2.

Dependence of and as a function of oxygen radical exposure times for the surface-oxidized blanket NiFe films.

Image of FIG. 3.
FIG. 3.

Normalized as a function of edge for a single NiFe free layer model with remanent domain configurations of an state and a state.

Image of FIG. 4.
FIG. 4.

Remanent magnetization configurations for single NiFe free layer models, in the case of a remanent state with the edge of (a) and (b) and in the case of a remanent state with the edge of (c) and (d) .

Image of FIG. 5.
FIG. 5.

Normalized magnetic switching curves of pseudo-MTJ stack models with and without the edge reduction, in the case of the remanent domain configurations of (a) an state and (b) a state.

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/content/aip/journal/jap/99/8/10.1063/1.2165138
2006-04-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2165138
10.1063/1.2165138
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