Schematic diagram of the helicity-dependent photocurrent measurement.
(a) SEM image and (b) MFM image of a wire array sample for optical measurements. Inset of (a) is a RHEED pattern of an epitaxial Fe layer on GaAs before patterning.
Helicity-dependent photocurrent at 8.3 K as a function of magnetic field perpendicular to the layer plane for sample (C). The inset shows the magnetization curve of the corresponding Fe layer before patterning. The arrow indicates the maximum magnetic field for helicity-dependent photocurrent measurements.
(a) Helicity-dependent photocurrent at 3.8 and as a function of temperature. Temperature variation of photocurrent is also shown. (b) Spin selectivity at the -GaAs interface estimated from the data shown in Fig. 4(a).
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