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Magnetoresistance of Co-doped ZnO thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Butterfly magnetoresistance of a sample measured at 4.2 K. The electrical hysteresis corresponds to the ferromagnetic hysteresis loop. The insert shows the temperature dependence of the resistivity of this and the other ZnO thin films.

Image of FIG. 2.
FIG. 2.

(Color online) Magnetoresistance of an undoped, substoichiometric ZnO sample at different temperatures. The magnetoresistance is predominantly due to scattering from localized states with .

Image of FIG. 3.
FIG. 3.

(Color online) Perpendicular (a), longitudinal (b), and transverse magnetoresistances (c) of a ferromagnetic film as a function of temperature (from top to bottom: 1.8, 2.5, 3.5, 5.0, 7.0, 10, 14, and 20 K). The solid lines in panel (a) are fits to the data using the contributions (i)–(iv) described in the text. The contributions (i) and (iii) are the dominant ones.

Image of FIG. 4.
FIG. 4.

(Color online) (a) (Top) High-field magnetoresistance of paramagnetic and ferromagnetic films at 3.4 K [the line is a fit to the data using (i)–(iv)]. (b) (Top) Angular dependence for the same sample. (a) (Bottom) The magnetoresistance of the paramagnetic film at 1.3 K, showing Shubnikov–de Hass oscillations of the resistance. (b) (Bottom) Magnetoresistance for the film.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetoresistance of Co-doped ZnO thin films