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The effect of doping level and sintering temperature on performance in nano-SiC doped and pure wires
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10.1063/1.2173639
/content/aip/journal/jap/99/8/10.1063/1.2173639
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2173639

Figures

Image of FIG. 1.
FIG. 1.

The curves at 5 and 20 K for the undoped and SiC doped wires sintered at 825 °C for 30 min.

Image of FIG. 2.
FIG. 2.

(a) The transport measured at 4.2 K for the doped and undoped wires sintered at 650 °C. (b) The effect of sintering temperature on the transport for the 10 wt % SiC doped wires.

Image of FIG. 3.
FIG. 3.

TEM images and selected area diffraction patterns obtained from the (a) 10 wt % SiC doped samples sintered at 600 °C and (b) 5 wt % SiC doped samples sintered at 825 °C.

Tables

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Table I.

Some parameters of undoped and SiC doped wires.

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/content/aip/journal/jap/99/8/10.1063/1.2173639
2006-04-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of doping level and sintering temperature on Jc(H) performance in nano-SiC doped and pure MgB2 wires
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2173639
10.1063/1.2173639
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