The curves at 5 and 20 K for the undoped and SiC doped wires sintered at 825 °C for 30 min.
(a) The transport measured at 4.2 K for the doped and undoped wires sintered at 650 °C. (b) The effect of sintering temperature on the transport for the 10 wt % SiC doped wires.
TEM images and selected area diffraction patterns obtained from the (a) 10 wt % SiC doped samples sintered at 600 °C and (b) 5 wt % SiC doped samples sintered at 825 °C.
Some parameters of undoped and SiC doped wires.
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