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Room temperature air oxidation of nanostructured Si thin films with varying porosities as studied by x-ray photoelectron spectroscopy
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10.1063/1.2193168
/content/aip/journal/jap/99/8/10.1063/1.2193168
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2193168
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A typical SEM photomicrograph of the morphology of a thin film having 35% porosity.

Image of FIG. 2.
FIG. 2.

XPS spectral evolution of nanostructured Si thin films with various porosities: (a) after and (b) after , in air at room temperature.

Image of FIG. 3.
FIG. 3.

(a) The relative concentration as a function of air oxidation time, at room temperature, for various porosities. (b) The time shifts used for the construction of a superposed plot of all the data in Fig. 2(a).

Image of FIG. 4.
FIG. 4.

Calculated oxidation shell thickness, as a function of oxidation time, for various porosities.

Image of FIG. 5.
FIG. 5.

Oxidation shell thicknesses, determined from deconvolution data, as a function of porosities, (a) for and , and (b) for , with a comparison to the prediction of Eq. (5).

Image of FIG. 6.
FIG. 6.

(a) binding energy shifts as a function of the value of in obtained from XPS peak intensities with ★ indicating the response of a nonporous film, thick, deposited in our laboratory; (b) the value of in determined from peak intensity ratio, as a function of porosity.

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/content/aip/journal/jap/99/8/10.1063/1.2193168
2006-05-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature air oxidation of nanostructured Si thin films with varying porosities as studied by x-ray photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/8/10.1063/1.2193168
10.1063/1.2193168
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