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Interface effect on emission properties of Er-doped Si nanoclusters embedded in prepared by magnetron sputtering
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10.1063/1.2191570
/content/aip/journal/jap/99/9/10.1063/1.2191570
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2191570

Figures

Image of FIG. 1.
FIG. 1.

(a) Si XPS spectrum of the NCSO film annealed at ; (b)Si XPS spectrum of the NCSO film annealed at ; (c) Si XPS spectrum of the NCSO film annealed at .

Image of FIG. 2.
FIG. 2.

Raman spectra from group C samples annealed at .

Image of FIG. 3.
FIG. 3.

PL spectra of A1000 and C1000. No emission from the NCSO:Er film deposited on the quartz substrate at .

Image of FIG. 4.
FIG. 4.

PL spectra of A1000 and B1000. The existence of reduces the PL intensity of the peak.

Image of FIG. 5.
FIG. 5.

Dependence of the 1.54 and PL intensities on the film thickness.

Image of FIG. 6.
FIG. 6.

Variation of the intensities of the 1.54 and PL from group A samples with annealing temperatures.

Image of FIG. 7.
FIG. 7.

Excitation mechanism for the Er-doped NCSO film deposited on the silicon substrate. Modified combined model from Refs. 3 and 10.

Tables

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Table I.

Preparation conditions and sample characteristics.

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/content/aip/journal/jap/99/9/10.1063/1.2191570
2006-05-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2191570
10.1063/1.2191570
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