(a) Si XPS spectrum of the NCSO film annealed at ; (b)Si XPS spectrum of the NCSO film annealed at ; (c) Si XPS spectrum of the NCSO film annealed at .
Raman spectra from group C samples annealed at .
PL spectra of A1000 and C1000. No emission from the NCSO:Er film deposited on the quartz substrate at .
PL spectra of A1000 and B1000. The existence of reduces the PL intensity of the peak.
Dependence of the 1.54 and PL intensities on the film thickness.
Variation of the intensities of the 1.54 and PL from group A samples with annealing temperatures.
Excitation mechanism for the Er-doped NCSO film deposited on the silicon substrate. Modified combined model from Refs. 3 and 10.
Preparation conditions and sample characteristics.
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