TOF-SIMS depth profiles of sample O-l at the (a) as-deposited state and (b) after PDA at .
SiN and SiO TOF-SIMS profiles of sample O-l at the as-deposited state and after PDA in detail (linear scale).
Si XPS spectra of sample O-h after PDA at with the two different deconvolution results based on (a) the interpretation given in Ref. 5 and (b) the interpretation using the spectra in (c), and (c) Si XPS spectra of a -thick layer grown at for using in the same ALD chamber.
Si XPS spectra of the O-l film at the (a) as-deposited state and after PDA at (b) 700 and (c) . (d), (e), and (f) correspond to the O-h film.
RBS spectra of as-deposited films with concentrations of (a) 150 and (b) . The ratios were 1.95 and 2.30, respectively.
Variation in in the energy band gap of Si with Pt and poly-Si gates of the samples O-h, O-l, and S as a function of .
(a) vs curve of the samples S, O-l, and O-h with an of ; (b) variation with of the samples O-h, O-l, and S.
Si XPS peak area (%) of the as-deposited and postannealed sample O-l.
Si XPS peak area ratio of of the as-deposited and postannealed sample O-l.
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