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Influence of the oxygen concentration of atomic-layer-deposited gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
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10.1063/1.2193163
/content/aip/journal/jap/99/9/10.1063/1.2193163
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2193163

Figures

Image of FIG. 1.
FIG. 1.

TOF-SIMS depth profiles of sample O-l at the (a) as-deposited state and (b) after PDA at .

Image of FIG. 2.
FIG. 2.

SiN and SiO TOF-SIMS profiles of sample O-l at the as-deposited state and after PDA in detail (linear scale).

Image of FIG. 3.
FIG. 3.

Si XPS spectra of sample O-h after PDA at with the two different deconvolution results based on (a) the interpretation given in Ref. 5 and (b) the interpretation using the spectra in (c), and (c) Si XPS spectra of a -thick layer grown at for using in the same ALD chamber.

Image of FIG. 4.
FIG. 4.

Si XPS spectra of the O-l film at the (a) as-deposited state and after PDA at (b) 700 and (c) . (d), (e), and (f) correspond to the O-h film.

Image of FIG. 5.
FIG. 5.

RBS spectra of as-deposited films with concentrations of (a) 150 and (b) . The ratios were 1.95 and 2.30, respectively.

Image of FIG. 6.
FIG. 6.

Variation in in the energy band gap of Si with Pt and poly-Si gates of the samples O-h, O-l, and S as a function of .

Image of FIG. 7.
FIG. 7.

(a) vs curve of the samples S, O-l, and O-h with an of ; (b) variation with of the samples O-h, O-l, and S.

Tables

Generic image for table
Table I.

Si XPS peak area (%) of the as-deposited and postannealed sample O-l.

Generic image for table
Table II.

Si XPS peak area ratio of of the as-deposited and postannealed sample O-l.

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/content/aip/journal/jap/99/9/10.1063/1.2193163
2006-05-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2193163
10.1063/1.2193163
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