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Influence of the oxygen concentration of atomic-layer-deposited gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
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10.1063/1.2193163
/content/aip/journal/jap/99/9/10.1063/1.2193163
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2193163
/content/aip/journal/jap/99/9/10.1063/1.2193163
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/content/aip/journal/jap/99/9/10.1063/1.2193163
2006-05-11
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2193163
10.1063/1.2193163
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