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Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations
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10.1063/1.2194121
/content/aip/journal/jap/99/9/10.1063/1.2194121
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2194121
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Field dependence of Hall resistivity and MR of sample A [(a) and (b)] and sample B [(c) and (d)] in out-of-plane magnetic fields at . (e) and (f) show the calculation of and which corresponds to the Hall resistivity and MR, respectively.

Image of FIG. 2.
FIG. 2.

Field-dependent MR of (a) sample A and (b) sample B at various applied field orientations at .

Image of FIG. 3.
FIG. 3.

MR curves of (a) sample A and (b) sample B measured at . and are switching fields as indicated by the arrows. , vs for sample A [(c) and (d)] and sample B [(e) and (f)]. The dashed curves give a fit to the experimental data.

Image of FIG. 4.
FIG. 4.

Schematic illustration of magnetization switching process of sample A for . The nucleation and propagation of a 90° domain wall associated with ⟨100⟩ cubic magnetocrystalline anisotropy are shown.

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/content/aip/journal/jap/99/9/10.1063/1.2194121
2006-05-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations
http://aip.metastore.ingenta.com/content/aip/journal/jap/99/9/10.1063/1.2194121
10.1063/1.2194121
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